<~>,ml-(lonauctoi , li ne, 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 silicon pnp power transistors d45vh series description ? low saturation voltage ? fast switching speed ? complement to type d44vh series applications ? designed for high-speed switching applications, such as switching regulators and high frequency inverters. they are also well-suited for drivers for high power switching circuits. absolute maximum ratings(ta=25c) symbol vcev vceo vebo ic low pc tj tstg parameter collector-emitter voltage collector-emitter voltage d45vh 1 d45vh 4 d45vh 7 d45vh 10 d45vh 1 d45vh 4 d45vh 7 d45vh 10 emitter-base voltage collector current-continuous collector current-peak collector power dissipation @tc=25'c junction temperature storage temperature range value -50 -70 -80 -100 -30 -45 -60 -80 -5 -15 -20 83 150 -55-150 unit v v v a a w 'c ?c thermal characteristics symbol rth j-c rth j-a parameter max thermal resistance, junction to case 1.5 thermal resistance, junction to ambient 62.5 unit ?c/w ?c/w 1 ^ .- f 1 2 3 2 ?^ 3 pin l.base 2. collector 3 buiitter to-220c package rrl| 4 fa lt a i lj. i-t? b * r~v^j p-6^ ^ moo*- !k i 4 : j ? c * j.i* ?? * 11101 ? *~ i 1 i i , dim a b c d f g h j k i a r s ii v /- l o -* soa1' ^ ? ? mm min 15.70 9.90 4.20 0.70 4.98 2.70 0.44 13.20 1 10 2.70 2.50 1.29 6.45 8.66 max 15.90 10.10 4.40 0.90 j.ou 5.18 2.90 0.46 13.40 1.30 2.90 2.70 1.31 6.65 8.86 *s ~^f nr"*"* *|*-j r[*- quality semi-conductors
silicon pnp power transistors d45vh series electrical characteristics tc=25'c unless otherwise specified symbol vceo(sus) vce(sat)-1 vce(sat)-2 vae(sat) icev iebo hpe-1 llfe-2 cob fr parameter d45vh 1 d45vh 4 collector-emitter sustaining voltage d45vh 7 d45vh10 collector-emitter saturation voltage collector-emitter saturation voltage base-emitter saturation voltage collector cutoff current emitter cutoff current dc current gain dc current gain output capacitance current-gain ? bandwidth product conditions lc=-25ma;lb=0 ic=-8a;ib=-0.8a lc=-15a;lb=-3a;tc=100t: ic=-8a;ib=-0.8a ic=-8a;ib=-0.8a;tc=100c vce=ratedvce;vbe(om=-4v vce=ratedvce;vse |
